Nanocrystalline Graphite Films Nucleation by the Radio Frequency Bias Pretreatment
| Autor: | V. V. Dvorkin, O. L. Golikova, A. T. Rakhimov, M.A. Timofeyev, N.N. Dzbanovsky, A. V. Bespalov, V. A. Krivchenko, Nikolay V. Suetin |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Scanning electron microscope Biomedical Engineering Nucleation Analytical chemistry chemistry.chemical_element Bioengineering General Chemistry Chemical vapor deposition Condensed Matter Physics Nanocrystalline material Condensed Matter::Materials Science Field electron emission Carbon film Chemical engineering chemistry Transmission electron microscopy General Materials Science |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 11:8912-8916 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2011.3462 |
| Popis: | New method for nucleation of different nanocrystalline carbon films upon monocrystalline Si substrate was proposed. The process is based on a combination of microwave and radio frequency plasma assisted chemical vapor deposition methods. Potential of the method for nucleation was demonstrated by deposition of nanocrystalline diamond film in pure microwave plasma in one process, immediately after "seeding" procedure. The method was also used for growth of nanocrystalline graphite (NCG) films, which are currently under intensive investigation due to their exceptional electronic properties, particularly fine electron emission characteristics. Deposited NCG films have demonstrated remarkable electron field emission properties having current density of up to 10 A/cm2. The films have also possessed good adhesion to silicon substrate. Carbon films and nucleation layer were characterized by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. |
| Databáze: | OpenAIRE |
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