Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Autor:	A. Mazid Munshi, Dong Chul Kim, Antonius T. J. van Helvoort, Junghwan Huh, Sangwook Lee, Hanne Kauko, Helge Weman, Hoyeol Yun, D L Dheeraj, Bjørn-Ove Fimland
Rok vydání:	2015
Předmět:	Materials science business.industry Mechanical Engineering Nanowire Photodetector Schottky diode Bioengineering General Chemistry Condensed Matter Physics Semiconductor Logic gate Optoelectronics General Materials Science Electrical measurements business Molecular beam epitaxy Electronic circuit
Zdroj:	Nano Letters. 15:3709-3715
ISSN:	1530-6992 1530-6984
Popis:	Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b0dbcd5a72f5e4a35e86d7f6429deeb https://doi.org/10.1021/acs.nanolett.5b00089 Zobrazit plný text záznamu