Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique
| Autor: | Marilyne Sousa, Eamon O'Connor, Mattia Halter, Jean Fompeyrine, Stefan Abel, Felix Eltes, Andrew J. Kellock |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Diffraction
Materials science Annealing (metallurgy) lcsh:Biotechnology field-cycling behavior 02 engineering and technology 01 natural sciences Capacitance voltage lcsh:TP248.13-248.65 0103 physical sciences Thermal General Materials Science 010302 applied physics Flash-lamp Millisecond business.industry General Engineering Coercivity 021001 nanoscience & nanotechnology Ferroelectricity lcsh:QC1-999 optical-properties Optoelectronics 0210 nano-technology business lcsh:Physics |
| Zdroj: | APL Materials, 6 (12) APL Materials, Vol 6, Iss 12, Pp 121103-121103-7 (2018) APL Materials |
| ISSN: | 2166-532X |
| Popis: | We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ∼21 μC/cm2 and a coercive field (Ec) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films. APL Materials, 6 (12) ISSN:2166-532X |
| Databáze: | OpenAIRE |
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