Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness

Autor:	Kolhatkar, J.S., Salm, Cora, Knitel, M.J., Wallinga, Hans, Kovalguine, A.
Rok vydání:	2002
Předmět:	Physics EWI-15590 METIS-206489 Noise temperature business.industry Noise spectral density Electrical engineering Noise figure Noise (electronics) Computer Science::Hardware Architecture Burst noise Gate oxide IR-43391 Phase noise Optoelectronics Flicker noise business
Zdroj:	Proceedings of the 32nd European Solid-State Device Research Conference, 83-86 STARTPAGE=83;ENDPAGE=86;TITLE=Proceedings of the 32nd European Solid-State Device Research Conference
DOI:	10.1109/essderc.2002.194876
Popis:	The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3afb288aeca3f598f98096380c645bd7 https://doi.org/10.1109/essderc.2002.194876 Zobrazit plný text záznamu