Transfer‐Free, Large‐Scale Growth of High‐Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil
| Autor: | Yohwan Park, Hee Cheul Choi, Intek Song, Hyeyeon Cho |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Graphene Thermal decomposition Alloy General Medicine 02 engineering and technology General Chemistry Chemical vapor deposition Substrate (electronics) engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Catalysis 0104 chemical sciences law.invention Chemical engineering law engineering 0210 nano-technology Layer (electronics) Quartz FOIL method |
| Zdroj: | Angewandte Chemie International Edition. 57:15374-15378 |
| ISSN: | 1521-3773 1433-7851 |
| Popis: | High-quality, large-area, single-layer graphene was directly grown on top of a quartz substrate by a low-pressure chemical vapor deposition (CVD) process using Cu vapor as a catalyst. In this process, continuous generation and supply of highly concentrated Cu vapor is the key to the growth of large-scale, high-quality graphene. It was achieved by direct physical contact, or "touch-down," of a Cu foil with an underlying sacrificial SiO2 /Si substrate, and the target quartz substrate was placed on top of the Cu foil, eventually having a quartz/Cu/SiO2 /Si sandwich structure. To establish the reaction mechanism, a test growth was performed without the quartz substrate, which revealed that Cu is diffused through the SiO2 layer of the sacrificial SiO2 /Si substrate to form liquid-phase Cu-Si alloy that emits massive Cu vapor. This Cu vapor catalyzes thermal decomposition of supplied CH4 gas. |
| Databáze: | OpenAIRE |
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