Controlling the canted state in antiferromagnetically coupled magnetic bilayers close to the spin reorientation transition
| Autor: | Hjm Henk Swagten, Rhodri Mansell, Dorothee Petit, Russell P. Cowburn, Amalio Fernández-Pacheco, FC Fanny Ummelen |
|---|---|
| Přispěvatelé: | Physics of Nanostructures, Mansell, Rhodri [0000-0002-6026-0731], Petit, Dorothee [0000-0003-0158-0329], Apollo - University of Cambridge Repository |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Field (physics) Magnetoresistance 02 engineering and technology 5104 Condensed Matter Physics 021001 nanoscience & nanotechnology Magnetic hysteresis Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Magnetic field Magnetization Hysteresis Condensed Matter::Materials Science 0103 physical sciences Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Spin (physics) 51 Physical Sciences Micromagnetics |
| Zdroj: | Applied Physics Letters, 110(10):102405. American Institute of Physics |
| ISSN: | 0003-6951 |
| Popis: | Canted magnetization is obtained in ultrathin, antiferromagnetically coupled magnetic bilayers with\ud thicknesses around the spin reorientation transition. The canting angle is controlled by both the\ud magnetic layer thickness and interlayer coupling strength, which are tuned independently. Hysteresis\ud loops are obtained, where magnetization components parallel and transverse to the applied field are\ud measured, and analyzed by comparison to micromagnetic simulations. This enables the canting angle\ud to be extracted and the behavior of the individual layers to be distinguished. Two types of canted\ud systems are obtained with either single-layer reversal or complex, coupled two-layer reversal, under\ud moderate external magnetic fields. Controlling the magnetization canting and reversal behavior of\ud ultra-thin layers is relevant for the development of magnetoresistive random-access memory and\ud spin-torque oscillator devices. |
| Databáze: | OpenAIRE |
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