Structural and magnetic properties of MnCoGe ferromagnetic thin films produced by reactive diffusion
| Autor: | E. Assaf, Khalid Hoummada, Alain Portavoce, L. Patout, Ahmed Charaï, R. Clérac, M. Bertoglio, Sylvain Bertaina |
|---|---|
| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherche Paul Pascal (CRPP), Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU) |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Thin films Analytical chemistry General Physics and Astronomy 02 engineering and technology 010402 general chemistry 01 natural sciences chemistry.chemical_compound Thin film [CHIM.MATE]Chemical Sciences/Material chemistry Surfaces and Interfaces General Chemistry Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Ferromagnetic resonance Reactive diffusion 0104 chemical sciences Surfaces Coatings and Films chemistry Ferromagnetism Ternary compound Transmission electron microscopy Ferromagnetic Orthorhombic crystal system Crystallite 0210 nano-technology MnCoGe |
| Zdroj: | Applied Surface Science Applied Surface Science, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩ Applied Surface Science, Elsevier, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩ |
| ISSN: | 0169-4332 |
| Popis: | International audience; The structure, the chemistry, and the magnetic properties of MnCoGe thin films elaborated by reactive diffusion were investigated. In situ X-ray diffraction (XRD) was used to study phase formation during thin film reaction. MnCo, MnGe, and CoGe binary systems were studied before investigating phase formation during Mn-Ge-Co ternary system reaction. Three pure layers of Mn, Ge, and Co were successively deposited by magnetron sputtering on SiO2 to form a 200 nm-thick Co/Ge/Mn stack, and annealed. Six phases were observed during reaction, first following the sequential phase formation observed for the binary systems at the two Mn/Ge and Ge/Co interfaces, and ending with the formation of a single ternary compound MnCoGe at 673 K. The structure and the composition of the MnCoGe films were characterized using XRD, atomic force microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The magnetic properties of the films were studied using superconducting quantum interference device (SQUID) and ferromagnetic resonance (FMR) measurements. The obtained MnCoGe thin films are polycrystalline with the stoichiometric composition Mn:Co:Ge(1/3:1/3:1/3), and show high porosity. They are made of grains exhibiting both the Ni2In-type hexagonal structure and the TiNiSi-type orthorhombic structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect