Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
| Autor: | Friedhard Römer, Martin Guttmann, Tim Wernicke, Michael Kneissl, Bernd Witzigmann |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Microscopy QC120-168.85 QH201-278.5 numerical modelling Engineering (General). Civil engineering (General) III-nitride Article TK1-9971 light emitting diode Descriptive and experimental mechanics efficiency General Materials Science ddc:530 Electrical engineering. Electronics. Nuclear engineering TA1-2040 ddc:620 inhomogeneous broadening |
| Zdroj: | Materials Materials; Volume 14; Issue 24; Pages: 7890 Materials, Vol 14, Iss 7890, p 7890 (2021) |
| Popis: | In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process. |
| Databáze: | OpenAIRE |
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