Tunable spin-orbit coupling in two-dimensional InSe
| Autor: | Adrian Ceferino, Andre K. Geim, Vladimir I. Fal'ko, Viktor Zólyomi, Samuel Magorrian, Zakhar R. Kudrynskyi, Amalia Patanè, Zakhar D. Kovalyuk, Irina V. Grigorieva, Denis A. Bandurin |
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| Rok vydání: | 2021 |
| Předmět: |
Physics
Range (particle radiation) Condensed matter physics Spintronics Condensed Matter - Mesoscale and Nanoscale Physics Computation Transistor FOS: Physical sciences Electron Spin–orbit interaction Coupling (probability) law.invention Condensed Matter::Materials Science Computer Science::Hardware Architecture National Graphene Institute law ResearchInstitutes_Networks_Beacons/national_graphene_institute Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Density functional theory |
| Zdroj: | Ceferino, A, Magorrian, S, Zolyomi, V, Bandurin, D, Geim, A, Patane, A, Kovalyuk, Z D, Kudrynskyi, Z R, Grigorieva, I & Fal'ko, V 2021, ' Tunable spin-orbit coupling in two-dimensional InSe ', Physical Review B, vol. 104, 125432 . https://doi.org/10.1103/PhysRevB.104.125432 |
| DOI: | 10.48550/arxiv.2106.04719 |
| Popis: | We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\ensuremath{\gamma}$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment. |
| Databáze: | OpenAIRE |
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