Compositional Uniformity of a Si0.5Ge0.5 Crystal Grown on Board the International Space Station
| Autor: | Tomioka，H, Ishizuka, Y., Harada, Y., Wada, S., Ito, T., Nagai, N., Kinoshita, Kyoichi, Arai, Yasutomo, Inatomi, Yuko, Tsukada, Takao, Miyata, Hiroaki, Tanaka, Ryota, Yoshikawa, Jyunichi, Kihara, Takashi, Shibayama, Hiroharu, Kubota, Yasushi, Warashina, Yusuke, Abe, Keita, Sumioka, Sara, Takayanagi, Masahiro, Yoda, Shinichi |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
A2. Traveling solvent zone growth
Materials science 9 mm caliber A2. Growth from solution Analytical chemistry Mineralogy Growth model Backscattered electron Condensed Matter Physics A1.Diffusion Inorganic Chemistry Crystal On board International Space Station Materials Chemistry B1.Germanium silicon alloys A1.Convection |
| Zdroj: | Journal of Crystal Growth. 419:47-51 |
| ISSN: | 0022-0248 |
| Popis: | 著者人数: 21名 Accepted: 2015-02-24 資料番号: SA1150291000 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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