WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
| Autor: | Victor Zatko, Anke Sander, Florian Godel, Odile Bezencenet, Bernard Servet, C. Carrétéro, Pierre Brus, Marie-Blandine Martin, Marta Galbiati, Bruno Dlubak, Pierre Seneor, Aymeric Vecchiola |
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| Přispěvatelé: | Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Thales Research and Technology [Palaiseau], THALES |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Tungsten disulfide WS2 02 engineering and technology 010402 general chemistry 01 natural sciences Pulsed laser deposition chemistry.chemical_compound Monolayer Deposition (phase transition) General Materials Science Electronics 2D semiconductors Electronic circuit spintronics Spintronics business.industry Nanotecnologia 021001 nanoscience & nanotechnology pulsed-laser deposition [SPI.TRON]Engineering Sciences [physics]/Electronics 0104 chemical sciences Espectroscòpia Raman Semiconductor chemistry Semiconductors Raman spectroscopy [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics X-ray photoemission spectroscopy 0210 nano-technology business |
| Zdroj: | Godel, Florian Zatko, V. Carrétéro, C. Sander, Anke Galbiati, Marta Vecchiola, Aymeric Brus, P. Bezencenet, O. Servet, B. Martin, M.-B. Dlubak, Bruno Seneor, Pierre 2020 WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits ACS Applied Nano Materials 3 8 7908 7916 ACS Applied Nano Materials ACS Applied Nano Materials, American Chemical Society, 2020, 3 (8), pp.7908-7916. ⟨10.1021/acsanm.0c01408⟩ RODERIC: Repositorio Institucional de la Universitat de Valéncia instname RODERIC. Repositorio Institucional de la Universitat de Valéncia |
| ISSN: | 2574-0970 |
| DOI: | 10.1021/acsanm.0c01408⟩ |
| Popis: | International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D-semiconductor integration protocol preserves the interface integrity. Illustratively, the WS2/Ni electrode is shown to be resistant to oxidation (even after extended exposure to ambient conditions) and to present tunneling characteristics once integrated into a complete vertical device. Overall, these experiments show that the presented PLD approach used here for WS2 growth is versatile and has a strong potential to accelerate the integration and evaluation of large-scale 2D-semiconductor platforms in electronics and spintronics circuits. |
| Databáze: | OpenAIRE |
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