Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing

Autor:	G. Haindl, Ulrich Heinzmann, Ulf Kleineberg, Stefan Luby, R. Senderak, V. Holy, Matej Jergel, Frank Hamelmann, Eva Majkova
Rok vydání:	1997
Předmět:	Materials science Silicon chemistry Annealing (metallurgy) Superlattice Doping X-ray crystallography Analytical chemistry General Physics and Astronomy chemistry.chemical_element Thermal stability Rutherford backscattering spectrometry Amorphous solid
Zdroj:	Journal of Applied Physics. 81:2229-2235
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.364273
Popis:	W1-xSix/Si multilayers (MLs) (x less than or equal to 0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 degrees C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1-xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 degrees C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1-xSix/Si MLs is lower than that of W/Si because of lower optical contrast. (C) 1997 American Institute of Physics.
Databáze:	OpenAIRE
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