Evaluation of photoelectrical properties of Bi doped CdTe crystals
| Autor: | A. Kadys, Ernesto Diéguez, Kestutis Jarasiunas, Edgardo Saucedo, D. Verstraeten, Jean-Claude Launay |
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| Přispěvatelé: | Institute of Materials Science and Applied Research, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), Centre Spatial de Liège (CSL), Université de Liège |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Band gap 02 engineering and technology Crystals 01 natural sciences Molecular physics Condensed Matter::Materials Science Optics Impurity 0103 physical sciences Photoelectric properties Electrical and Electronic Engineering 010302 applied physics business.industry Doping CdTe [CHIM.MATE]Chemical Sciences/Material chemistry Photorefractive effect 021001 nanoscience & nanotechnology Condensed Matter Physics Space charge Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photoexcitation Picosecond 0210 nano-technology business Excitation |
| Zdroj: | Journal of Materials Science: Materials in Electronics Journal of Materials Science: Materials in Electronics, Springer Verlag, 2008, 19 (Supplement 1), pp.234-238. ⟨10.1007/s10854-008-9694-1⟩ |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-008-9694-1 |
| Popis: | International audience; Nonequilibrium carrier generation, transport, and recombination features have been investigated in Bi-doped and Yb-codoped bulk CdTe crystals, using time-resolved picosecond free-carrier and photorefractive grating techniques. Peculiarities of deep-impurity dependent carrier generation were studied at below band-gap photoexcitation using 1064 nm wavelength. Carrier transport in light created space charge field provided the instantaneous diffusion coefficient values, dependent on excitation energy, and revealed a sign of the dominant photoexcited carriers in the crystals. The studies provided also a deeper insight into an initial occupation of deep impurity levels, which was found strongly dependent on doping and co-doping. At low Bi density (∼2 × 1017 cm−3), the hole generation was dominant, while at higher doping (8 × 1017 cm−3) the bipolar plasma generation prevailed. Codoping by Yb (∼5 × 1017 cm−3) revealed deep donor features of deep defects and formation of a strong space charge field. Carrier dynamics in the given crystals was compared with CdTe:V ones, where vanadium is known to form the mid-gap donor levels. |
| Databáze: | OpenAIRE |
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