Structural and electrical properties of the interfacial layer in sputter deposited LaAlO3/Si thin films
| Autor: | V. Edon, C. Eypert, C. Cohen, C. H. Cardinaud, B. Agius, M. C. Hugon |
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| Přispěvatelé: | Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces Sputter deposition 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials X-ray photoelectron spectroscopy Sputtering Ellipsometry Physical vapor deposition Nuclear reaction analysis 0103 physical sciences Materials Chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Thin film 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2007, 515 (20-21), pp.7782. ⟨10.1016/j.tsf.2007.03.179⟩ Thin Solid Films, 2007, 515 (20-21), pp.7782. ⟨10.1016/j.tsf.2007.03.179⟩ |
| ISSN: | 0040-6090 |
| Popis: | In order to investigate the effects of the sputter deposition parameters and the influence of the post-deposition thermal treatment on the LaAlO3/Si interface, Rutherford Backscattering Spectrometry (RBS), ion channeling, Nuclear Reaction Analysis (NRA), X-ray Photoemission Spectroscopy (XPS), Capacitance–Voltage measurements and Spectroscopic Ellipsometry (SE) were performed on LaAlO3/Si or RuO2/LaAlO3/Si Metal-Oxide-Semiconductor (MOS) structures. RBS-channeling revealed that the Si surface damage due to sputtering deposition at LaAlO3/Si interface is reduced when increasing the deposition pressure, between 0.5 and 5 Pa, and when annealing the films in 1 atm of O2 at 450 °C. XPS spectra were correlated to RBS and NRA measurements. Even if the formation of a low-κ interfacial layer is demonstrated by SE measurements, high deposition pressure and post-deposition annealing in O2 at 600 °C were found to be the best procedure to improve the electrical characteristics of MOS structures in terms of fixed charge and slow trap densities. For these parameters, the κ value was found to be 14, and the equivalent interfacial thickness was estimated to be 1.3 nm, which is lower that most of the previously reported values. |
| Databáze: | OpenAIRE |
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