Bipolar device fabrication using a scanning tunnelling microscope
| Autor: | Sigrun A. Köster, Andreas Fuhrer, Claudia Fleischmann, Tomáš Škereň, Bastien Douhard |
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| Rok vydání: | 2020 |
| Předmět: |
Microscope
Materials science Dopant business.industry Doping Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Scanning probe microscopy law 0103 physical sciences Tunnel diode Optoelectronics Electrical and Electronic Engineering 010306 general physics 0210 nano-technology business Instrumentation Lithography Quantum tunnelling |
| Zdroj: | Nature Electronics. 3:524-530 |
| ISSN: | 2520-1131 |
| DOI: | 10.1038/s41928-020-0445-5 |
| Popis: | Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can be used to fabricate atomic-scale dopant devices in silicon substrates and could potentially be used to build a dopant-based quantum computer. However, all devices fabricated so far have been based on the n-type dopant precursor phosphine. Here, we show that diborane can be used as a p-type dopant precursor, allowing p-type and bipolar dopant devices to be created. Characterization of diborane δ-layers reveals that similar mobilities and densities can be achieved as for phosphine, with sheet resistivities as low as 300 Ω □−1. Scanning tunnelling microscope imaging and transport measurements of a 5.5-nm-wide p-type dopant nanowire give an estimated upper bound of 2 nm for the lithographic resolution of the p-type dopant profiles. By combining our p-type doping approach with established phosphine-based n-type doping, we fabricate a 100-nm-wide p–n junction and show that its electrical behaviour is similar to that of an Esaki diode. Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can create p-type dopant nanowires and p–n junctions by using diborane as a p-type dopant precursor. |
| Databáze: | OpenAIRE |
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