Formation and Nature of InGaN Quantum Dots in GaN Nanowires
| Autor: | Arnab Hazari, Xianhe Liu, Lifan Yan, Shafat Jahangir, Saniya Deshpande, Thomas Frost, Joanna Mirecki-Millunchick, Zetian Mi, Pallab Bhattacharya |
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| Rok vydání: | 2015 |
| Předmět: |
Physics
Condensed matter physics Silicon business.industry Mechanical Engineering Nanowire chemistry.chemical_element Bioengineering Heterojunction General Chemistry Condensed Matter Physics Laser 7. Clean energy law.invention Condensed Matter::Materials Science chemistry Transmission electron microscopy law Quantum dot Optoelectronics General Materials Science business Astrophysics::Galaxy Astrophysics Molecular beam epitaxy Visible spectrum |
| Zdroj: | Nano Letters. 15:1647-1653 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl5041989 |
| Popis: | InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as important gain media for the realization of visible light sources. The nature of quantum confinement in the disks is largely unknown. From the unique nature of the measured temperature dependence of the radiative lifetime and direct transmission electron microscopy, it is evident that such self-organized islands (disks) behave as quantum dots. This is confirmed by the observation of single photon emission from a single disk-in-nanowire and the presence of a sharp minimum in the line width enhancement factor of edge emitting lasers having the InGaN disks as the gain media. |
| Databáze: | OpenAIRE |
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