Nanoscale photovoltage mapping in CZTSe/CuxSe heterostructure by using kelvin probe force microscopy
| Autor: | Mylène Hendrickx, Deepak Varandani, Manoj Vishwakarma, Bodh Raj Mehta, Joke Hadermann |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Kelvin probe force microscope
Materials science Polymers and Plastics business.industry Physics Metals and Alloys Heterojunction engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials Microscopy engineering Optoelectronics Kesterite business Nanoscopic scale |
| Zdroj: | MATERIALS RESEARCH EXPRESS |
| Popis: | In the present work, kelvin probe force microscopy (KPFM) technique has been used to study the CZTSe/CuxSe bilayer interface prepared by multi-step deposition and selenization process of metal precursors. Transmission electron microscopy (TEM) confirmed the bilayer configuration of the CZTSe/CuxSe sample. Two configuration modes (surface mode and junction mode) in KPFM have been employed in order to measure the junction voltage under illumination conditions. The results show that CZTSe/CuxSe has small junction voltage of ∼21 mV and the presence of CuxSe secondary phase in the CZTSe grain boundaries changes the workfunction of the local grain boundaries region. The negligible photovoltage difference between grain and grain boundaries in photovoltage image indicates that CuxSe phase deteriorates the higher photovoltage at grain boundaries normally observed in CZTSe based device. These results can be important for understanding the role of secondary phases in CZTSe based junction devices. |
| Databáze: | OpenAIRE |
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