Photoluminescence Study of Erbium in Silicon with a Free-Electron Laser
| Autor: | H.H.P.Th. Bekman, C.A.J. Ammerlaan, I. Tsimperidis, C.J.G.M. Langerak, Tom Gregorkiewicz |
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| Přispěvatelé: | TNO Fysisch en Elektronisch Laboratorium |
| Rok vydání: | 1997 |
| Předmět: |
Silicon
Materials science Photoluminescence Infrared Free electron lasers Physics::Optics chemistry.chemical_element law.invention Erbium law Bound excitons Semiconductor doping General Materials Science Infrared radiation business.industry Physics Mechanical Engineering Free-electron laser Condensed Matter Physics Laser Wavelength chemistry Mechanics of Materials Excited state Optoelectronics Excitons business Neodymium lasers |
| Zdroj: | Materials Science Forum, 9993, 258-263, 1497-1502 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.258-263.1497 |
| Popis: | The influence of intense infrared (IR) radiation in the range 7-17 μm on the photoluminescence (PL) of erbium in silicon has been investigated. To excite the PL a pulsed Nd:YAG laser operating in the visible with a wavelength of 532 nm has been used. The infrared beam was generated by a free-electron laser. In the experiment the intensity and decay kinetics of the low-temperature PL of Er-doped silicon were monitored as a function of the wavelength of the quenching beam and its delay with respect to the excitation pulse of the visible-light laser. The experiments show quenching of the PL by the IR pulse only at delays shorter than approximately 250 μs The result is interpreted as dissociation of the Er-related bound-exciton (BE) state whose effective lifetime is then estimated as approximately 100 μs. A special quenching feature for λ≈ 12.5 μm is detected indicating a possible "back-transfer" mechanism involving the excited Er state. For still longer delay times a small transient increase of Er PL is observed. |
| Databáze: | OpenAIRE |
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