Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole
| Autor: | Benjamin D. Naab, Wei Chen, Eric Adijanto, Nan Liu, Hye Ryoung Lee, Zhenan Bao, Peng Wei, Yi Cui, Lijie Ci, Jin-Seong Park, Jian-Qiang Zhong |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Molecular Structure Dopant Photoemission spectroscopy Graphene Mechanical Engineering Doping Bioengineering Nanotechnology General Chemistry Condensed Matter Physics law.invention Solutions law Benzimidazoles Graphite General Materials Science Volatilization Bilayer graphene Solution process Graphene nanoribbons Graphene oxide paper |
| Zdroj: | Nano Letters. 13:1890-1897 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated a complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices. |
| Databáze: | OpenAIRE |
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