Unraveling the physics of vertical organic field effect transistors through nanoscale engineering of a self-assembled transparent electrode
| Autor: | Nir Tessler, Ariel J. Ben-Sasson |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Transistors Electronic Schottky barrier Bioengineering Nanotechnology law.invention law General Materials Science Organic Chemicals Particle Size Lithography Electrodes Organic electronics Organic field-effect transistor business.industry Mechanical Engineering Transistor General Chemistry Equipment Design Condensed Matter Physics Aspect ratio (image) Nanostructures Equipment Failure Analysis Electrode Optoelectronics Field-effect transistor business |
| Zdroj: | Nano letters. 12(9) |
| ISSN: | 1530-6992 |
| Popis: | While organic transistors' performances are continually pushed to achieve lower power consumption, higher working frequencies, and higher current densities, a new type of organic transistors characterized by a vertical architecture offers a radically different design approach to outperform its traditional counterparts. Naturally, the distinct vertical architecture gives way to different governing physical ground rules and structural key features such as the need for an embedded transparent electrode. In this paper, we make use of a zero-frequency electric field-transparent patterned electrode produced through block-copolymer self-assembly based lithography to control the performances of the vertical organic field effect transistor (VOFET) and to study its governing physical mechanisms. Unlike other VOFET structures, this design, involving well-defined electrode architecture, is fully tractable, allowing for detailed modeling, analysis, and optimization. We provide for the first time a complete account of the physics underpinning the VOFET operation, considering two complementary mechanisms: the virtual contact formation (Schottky barrier lowering) and the induced potential barrier (solid-state triode-like shielding). We demonstrate how each mechanism, separately, accounts for the link between controllable nanoscale structural modifications in the patterned electrode and the VOFET performances. For example, the ON/OFF current ratio increases by up to 2 orders of magnitude when the perforations aspect ratio (height/width) decreases from ∼0.2 to ∼0.1. The patterned electrode is demonstrated to be not only penetrable to zero-frequency electric fields but also transparent in the visible spectrum, featuring uniformity, spike-free structure, material diversity, amenability with flexible surfaces, low sheet resistance (20-2000 Ω sq(-1)) and high transparency (60-90%). The excellent layer transparency of the patterned electrode and the VOFET's exceptional electrical performances make them both promising elements for future transparent and/or efficient organic electronics. |
| Databáze: | OpenAIRE |
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