High performance III/V RTD and PIN diode on a silicon (001) substrate
| Autor: | A. Matiss, Werner Prost, A.-C. Mofor, V. Khorenko, A. Poloczek, Andrey Bakin, Andreas Schlachetzki, Franz-Josef Tegude, S. Neumann |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Thin layers Silicon business.industry PIN diode chemistry.chemical_element Mineralogy General Chemistry Substrate (electronics) Epitaxy law.invention chemistry.chemical_compound chemistry law Indium phosphide Optoelectronics General Materials Science Thin film business Elektrotechnik Diode |
| Zdroj: | Applied Physics A. 87:539-544 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver circuit on a Si-substrate is proposed and simulated using HSPICE up to 10 Gbit/s. |
| Databáze: | OpenAIRE |
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