Novel EUV resist materials for 7 nm node and beyond
| Autor: | Hironori Oka, Tadashi Omatsu, Furutani Hajime, Mitsuhiro Fujita, Shirakawa Michihiro, Toru Fujimori, Sakita Kyohei, Toru Tsuchihashi, Nishiki Fujmaki, Wataru Nihashi |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Polymers and Plastics business.industry Node (networking) Extreme ultraviolet lithography Organic Chemistry 02 engineering and technology Surface finish Semiconductor device 021001 nanoscience & nanotechnology 01 natural sciences Decomposition Reduction (complexity) Resist 0103 physical sciences Materials Chemistry Optoelectronics 0210 nano-technology Absorption (electromagnetic radiation) business Lithography |
| Zdroj: | Advances in Patterning Materials and Processes XXXV. |
| Popis: | For semiconductor device manufacturing, line width roughness (LWR) and defect reduction is one of the most important items to obtain high yield. In this study we described the development of novel high absorption resists for use in extreme ultra violet (EUV) lithography system and its LWR and nano-bridge reduction capability. Herein decomposition rates of photo acid generator (PAG) and several high EUV absorption compounds were studied to clarify inefficient pass on acid generation mechanism. As a result, it is revealed that existence of decomposition pass on high EUV absorption compounds degenerates PAG decomposition efficiency. New high absorption materials were synthesized with taking into account its decomposition durability and its lithographic performance were investigated. 15-20% dose reduction keeping its LWR value and nano-bridge reduction were observed even at lower dose condition compared to non-high absorption platform. |
| Databáze: | OpenAIRE |
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