Current-induced magnetization switching in CoTb amorphous single layer
| Autor: | Xianzhe Chen, Jianwang Cai, Feng Pan, Minghua Guo, Caihua Wan, L. Cai, Cheng Song, L. Y. Liao, Nan-Xian Chen, J. Su, L. Sun, T. Xu, Xiao Wang, Wanjun Jiang, F. H. Xue, Y. X. Song, Ruiqi Zhang, R. Y. Chen, Hui Wu, Hua Bai, Xufeng Kou, Hao Bai |
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| Rok vydání: | 2020 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Condensed matter physics Field (physics) media_common.quotation_subject Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Asymmetry Amorphous solid Magnetization 0103 physical sciences Spin Hall effect Thin film 010306 general physics 0210 nano-technology Absorption (electromagnetic radiation) Current density media_common |
| DOI: | 10.48550/arxiv.2006.10319 |
| Popis: | We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films. Comment: 17 pages, 4 figures, Phys. Rev. B 101, 214418 (2020) |
| Databáze: | OpenAIRE |
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