Investigation of a new method of the organosilicon compounds activation by a low-energy electron beam for SiCN-coatings deposition
| Autor: | Seif O. Cholakh, Andrey Menshakov |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon ELECTRON BEAM LITHOGRAPHY HEXAMETHYLDISILAZANE chemistry.chemical_element LOW-ENERGY ELECTRON BEAM SICN COATING Bioengineering Electron Activation energy LOW ENERGY ELECTRON BEAMS BEAM CURRENTS SILICON COMPOUNDS ELECTRON BEAMS chemistry.chemical_compound Low energy NITROGEN COMPOUNDS DEPOSITION SILICON ORGANOSILICON COMPOUNDS CHEMICAL VAPOR DECOMPOSITION Organosilicon COATINGS COATINGS DEPOSITION business.industry BEAM PLASMA INTERACTIONS POLYMER DERIVED CERAMIC ACTIVATION ENERGY Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films ELECTRONS PRECURSOR MOLECULES chemistry Mechanics of Materials Cathode ray Optoelectronics business Deposition (chemistry) Electron-beam lithography Biotechnology ELECTRON BEAM ENERGY |
| Zdroj: | e-J. Surf. Sci. Nanotechnol. e-Journal of Surface Science and Nanotechnology |
| Popis: | The article describes a new method of organosilicon compounds activation by low energy electron beam for SiCN coatings deposition. The composition of the beam plasma in a hexamethyldisilazane-containing gas medium was studied, and it was shown that the precursor molecules decomposition degree increases with the beam current and nonmonotonically depends on the electron beam energy. The application of a low-energy electron beam for the plasma-chemical vapor decomposition of hexamethyldisilazane and for samples heating up by electron beam to 600°C makes it possible to obtain SiCN-based coatings with a hardness up to 18 GPa and thickness ~1 μm for 1 h. © 2020 The Japan Society of Vacuum and Surface Science. All rights reserved. The study was financially supported by the Russian Science Fund, grant No. 18-79-00233. |
| Databáze: | OpenAIRE |
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