Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
Autor: | J.M. Jacobsen, Yu. A. Pusep, Marcio D. Teodoro, Ray R. LaPierre, M.A. Tito Patricio, B. G. M. Tavares |
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Rok vydání: | 2021 |
Předmět: |
Photoluminescence
Materials science 02 engineering and technology 01 natural sciences 7. Clean energy Condensed Matter::Materials Science symbols.namesake 0103 physical sciences POÇOS QUÂNTICOS 010306 general physics Quantum well Circular polarization Spin-½ Zeeman effect Condensed matter physics Landau quantization Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Excited state symbols Condensed Matter::Strongly Correlated Electrons 0210 nano-technology |
Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
ISSN: | 1386-9477 |
DOI: | 10.1016/j.physe.2021.114700 |
Popis: | Polarization-resolved photoluminescence was used to study spin relaxation of photoexcited holes in In 0.53Ga0.47As/InP quantum wells in a quantizing magnetic field as a function of temperature. At a temperature below 10 K, the circular polarization of the photoluminescence due to the spin-split valence band Landau levels was found temperature-independent. In this temperature range fast hole spin relaxation as compared to their lifetime leads to the photoluminescence circular polarization determined by the ratio of these times. Increasing temperature resulted in efficient hole spin thermalization in the Zeeman split valence band Landau levels and as a consequence, in vanishing photoluminescence polarization. Fits of the experimental data by the theory allowed a determination of the hole spin relaxation times related to different Landau levels and the corresponding hole effective g-factor. Direct measurements of the hole spin relaxation times prove the obtained results. |
Databáze: | OpenAIRE |
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