Application of the Metal Reflector for Redistributing the Focusing Intensity of SPPs
| Autor: | Zhongwen Lin, Yonggang Meng, Jiying Chen, Pengfei Xu, Jing Li, Jiaxin Ji |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering chemistry.chemical_element Energy flux 02 engineering and technology Dielectric energy redistribution Photoresist 01 natural sciences Article law.invention lcsh:Chemistry 010309 optics Laser linewidth metal reflector Aluminium law 0103 physical sciences General Materials Science rotational near-field photolithography business.industry Attenuation 021001 nanoscience & nanotechnology Surface plasmon polariton lcsh:QD1-999 chemistry energy flux density Optoelectronics Photolithography 0210 nano-technology business |
| Zdroj: | Nanomaterials Volume 10 Issue 5 Nanomaterials, Vol 10, Iss 937, p 937 (2020) |
| ISSN: | 2079-4991 |
| DOI: | 10.3390/nano10050937 |
| Popis: | The near-field photolithography system has attracted increasing attention in the micro- and nano-manufacturing field, due to the high efficiency, high resolution, and the low cost of the scheme. Nevertheless, the low quality of the nano-patterns significantly limits the industrial application of this technology. Theoretical calculations showed that the reason for the poor nano-patterns is the sharp attenuation of the surface plasmon polaritons (SPPs) in the photoresist layer. The calculation results suggest that the waveguide mode, which is composed of the chromium-equivalent dielectric layer-aluminum, can facilitate the energy flux density distribution in the photoresist layer, resulting in the enhancement of the field intensity of SPPs in the photoresist layer. This reduces the linewidth of nano-patterns, while it enhances the pattern steepness. Eventually, the focusing energy of the photoresist layer can be improved. The finite-difference time-domain method was employed to simulate and verify the theoretical results. It is found that for the rotational near-field photolithography with 355 nm laser illumination, the linewidths of the nano-patterns with and without the aluminum reflector are 17.54 nm and 65.51 nm, respectively. The robustness of the experimental results implies that the application of the aluminum reflector enhances the focusing effect in the photoresist, which can broaden the application of the near-field photolithography. |
| Databáze: | OpenAIRE |
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