Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
| Autor: | Z. Djebbour, Simon Gautier, Konstantinos Pantzas, Anne Migan-Dubois, Tarik Moudakir, S. Suresh, Abdallah Ougazzaden, V. Gorge |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL)-CentraleSupélec, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Gaussian 02 engineering and technology Classification of discontinuities 01 natural sciences 7. Clean energy Standard deviation law.invention symbols.namesake Position (vector) law 0103 physical sciences Solar cell General Materials Science 010302 applied physics [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] InGaN business.industry Graded bandgap Mechanical Engineering Photovoltaic system Modeling 021001 nanoscience & nanotechnology Condensed Matter Physics Mechanics of Materials symbols Optoelectronics Defect 0210 nano-technology business Layer (electronics) Voltage |
| Zdroj: | Materials Science and Engineering Materials Science and Engineering, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩ Materials Science and Engineering, Elsevier, 2013, B 178, pp.142-148. ⟨10.1016/j.mseb.2012.10.033⟩ |
| ISSN: | 0025-5416 |
| Popis: | International audience; In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In0.53Ga0.47N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells. |
| Databáze: | OpenAIRE |
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