Carrier-induced coherent acoustic phonon excitation in strain engineered InAs/GaAs quantum dot clusters

Autor:	EW Erik Bogaart, JH Joachim Wolter, Jem Jos Haverkort, van T Twan Lippen, R Richard Nötzel
Přispěvatelé:	Photonics and Semiconductor Nanophysics
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	Photoluminescence Condensed matter physics Phonon Chemistry Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect symbols.namesake Condensed Matter::Materials Science Reflection (mathematics) Stark effect Quantum dot Excited state symbols Charge carrier Excitation
Zdroj:	Physica Status Solidi C: Conferences, 3(11), 3713-3716. Wiley-VCH Verlag 4th Int. Conf. on Semiconductor Quantum Dots (QD2006), Chamonix-Mont Blanc (France), May 1-5, 2006, P90-219 STARTPAGE=P90;ENDPAGE=219;TITLE=4th Int. Conf. on Semiconductor Quantum Dots (QD2006), Chamonix-Mont Blanc (France), May 1-5, 2006
ISSN:	1610-1634
Popis:	Strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs are studied by means of time-resolved differential reflection spectroscopy revealing coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon modes. Photogenerated carriers which are captured within the ordered lateral QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons modulate the optical properties of the QDs through the quantum-confined Stark effect, causing oscillations of the reflection signal. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37eaa43be0b264a17e70a0d0371dcff0 https://doi.org/10.1002/pssc.200671570 Zobrazit plný text záznamu