Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography

Autor:	Eric A. Stach, Parijat Deb, Mark Oliver, Vijay Rawat, Timothy D. Sands, Hogyoung Kim, Sangho Kim, Mike Marshall
Rok vydání:	2005
Předmět:	Fabrication Materials science Silicon Mechanical Engineering chemistry.chemical_element Bioengineering Nanotechnology Heterojunction General Chemistry Condensed Matter Physics Epitaxy Monocrystalline silicon chemistry General Materials Science Nanorod Reactive-ion etching Lithography
Zdroj:	Nano letters. 5(9)
ISSN:	1530-6984
Popis:	Monocrystalline, vertically aligned and faceted GaN nanorods with controlled diameter have been synthesized by selective organometallic vapor phase epitaxy (OMVPE) onto GaN exposed at the bottom of pores in silicon dioxide templates patterned by reactive ion etching through self-organized porous anodic alumina films. This process is free of foreign catalysts, and the nanorod diameter control is achieved without the need for low-throughput nanolithographic techniques. The use of conventional OMVPE growth conditions allows for the straightforward adaptation of conventional doping and heterostructure growth as will be necessary for the fabrication of nanorod-based strain-relaxed electrically pumped lasers and light-emitting diodes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37a9f280f3079f4ae64ddd0b5198f70f https://pubmed.ncbi.nlm.nih.gov/16159236 Zobrazit plný text záznamu