Area-Selective Deposition by a Combination of Organic Film Passivation and Atomic Layer Deposition
| Autor: | Mattia Pasquali, Silvia Armini, Stefan De Gendt |
|---|---|
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | ECS Transactions. 92:25-32 |
| ISSN: | 1938-5862 1938-6737 |
| Popis: | To enable the downscaling of Integrated Circuit (IC) components accordingly to Moore’s law, novel nano-patterning techniques and materials are essential. Self-Aligned patterning schemes, such as Area Selective Deposition (ASD), are receiving increasing attention due to challenges created by the continuous shrinking of critical dimensions (e.g. self-aligned vias to lines in multi-level interconnect architectures). In ASD, a given film is deposited exclusively on the desired growth area with respect to the non-growth area. Typically, this can be achieved by exploiting material properties, such as surface chemical composition variations, in combination with surface-sensitive deposition techniques, such as Atomic Layer Deposition (ALD). In addition, the ALD self-limiting half-cycle surface reactions provide a layer-by-layer growth mechanism, which is strongly dependent upon the chemical reactivity to the underlying layer. Intrinsic growth nucleation variations on different surfaces can be exploited in an ASD scheme, but this effect is typically limited to very few ALD cycles. In this talk, Self-Assembled Monolayers (SAMs) are evaluated as a passivation coating to extend the ASD process window. Potential applications that will be discussed are Copper passivation in a self-aligned via patterning process flow and area-selective bottom-up VIA fill in an interconnect metallization scheme. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|