Defect evolution and interplay in n-type InN
| Autor: | Filip Tuomisto, Arantxa Vilalta-Clemente, William J. Schaff, S. Kraeusel, Pierre Ruterana, Christian Rauch, Ben Hourahine, Bertrand Lacroix |
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| Přispěvatelé: | Perustieteiden korkeakoulu, School of Science, Teknillisen fysiikan laitos, Department of Applied Physics, Aalto-yliopisto, Aalto University |
| Rok vydání: | 2012 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Physics and Astronomy (miscellaneous) InN Physics positron annihilation Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology vacancies 021001 nanoscience & nanotechnology 01 natural sciences Free carrier Positron annihilation spectroscopy Edge type Condensed Matter::Materials Science Crystallography Transmission electron microscopy Vacancy defect 0103 physical sciences TEM Irradiation 010306 general physics 0210 nano-technology dislocations |
| Zdroj: | Applied Physics Letters. 100:091907 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3688038 |
| Popis: | The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects. Enhanced formation of larger V_In-mV_N clusters is observed at the interface, which speaks for high concentrations of additional V_N in the near-interface region and coincides with an increase in the density of screw and edge type dislocations in that area. Comment: 4 pages, 3 figures |
| Databáze: | OpenAIRE |
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