High temperature nitridation structures of the Si(111)-(7×7) surface

Autor:	Rong-fu Lin, Hong-chuan Wang, Xun Wang
Rok vydání:	1987
Předmět:	Surface (mathematics) Electron energy Silicon Chemistry Semiconductor materials Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Nitrogen Surfaces Coatings and Films Bond length Materials Chemistry Surface structure Single crystal
Zdroj:	Surface Science Letters. 188:A357
ISSN:	0167-2584
Popis:	The initial nitridation structures of the Si(111) surface have been studied by electron energy loss fine structure (EELFS). From the values of the bond lengths between the nitrogen atoms and their nearest silicon atoms obtained by the experimental measurements, it could be deduced that the nitrogen atoms are not at the centers of the three-fold sites of the silicon surface in the “8×8” nitridation structure while in the “quadruplet” structure they do locate at the centers of the three-fold sites but are not co-planar with surface silicon atoms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::373f4f9259c41778c20fd3a4a9f2f855 https://doi.org/10.1016/0167-2584(87)90017-x Zobrazit plný text záznamu