Energy dependent electron and hole impact ionization in Si bipolar transistors
| Autor: | Palestri, Pierpaolo, Selmi, Luca, Hurkx, F, Slotboom, J, Sangiorgi, Enrico |
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| Rok vydání: | 2002 |
| Předmět: |
Avalanche diode
Materials science Bipolar junction transistor Analytical chemistry Computer Science::Software Engineering Electron Avalanche breakdown Impact ionization Nonlinear Sciences::Adaptation and Self-Organizing Systems Single-photon avalanche diode Ionization otorhinolaryngologic diseases Electrical measurements sense organs Atomic physics |
| Zdroj: | International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217). |
| DOI: | 10.1109/iedm.1998.746496 |
| Popis: | This paper describes a self-consistent procedure to extract energy dependent electron (/spl alpha/) and hole (/spl beta/) ionization coefficients directly from electrical measurements of multiplication factors (M/sub n/ and M/sub p/, respectively) carried out on a single reversed junction in a bipolar device. The extracted /spl alpha/ and /spl beta/ coefficients are used to accurately calculate breakdown voltages in a variety of bipolar devices. Results point out the role of holes and of non-local hole heating on the avalanche characteristics of modern bipolar devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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