Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface

Autor: Riccardo Rurali, Jorge Íñiguez, Yuefeng Nie, Long Qing Chen, Jian Zhou, Yunlei Zhou, Wei Guo, Zhiming Geng, Zheng-Bin Gu, Di Wu, Jianjun Wang, Chen Di, Desheng Kong, Hugo Aramberri, Lu Han, Haoying Sun, Ming-Hui Lu, Xingyu Jiang, Claudio Cazorla, Dianxiang Ji, Hanyu Fu, Xiaoqing Pan, Yipeng Zang, Yan-Feng Chen, Ningchong Zheng, Xue-Jun Yan
Přispěvatelé: National Natural Science Foundation of China, National Basic Research Program (China), Fundamental Research Funds for the Central Universities (China), Jiangsu Province, Fonds National de la Recherche Luxembourg, Ministerio de Ciencia, Innovación y Universidades (España), Generalitat de Catalunya, Aramberri, Hugo, Cazorla, Claudio, Íñiguez, Jorge, Rurali, Riccardo, Nie, Yuefeng, Universitat Politècnica de Catalunya. Departament de Física, Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica, Universitat Politècnica de Catalunya. SIMCON - First-principles approaches to condensed matter physics: quantum effects and complexity, Aramberri, Hugo [0000-0003-2216-8931], Cazorla, Claudio [0000-0002-6501-4513], Íñiguez, Jorge [0000-0001-6435-3604], Rurali, Riccardo [0000-0002-4086-4191], Nie, Yuefeng [0000-0002-3449-5393]
Rok vydání: 2021
Předmět:
Zdroj: Digital.CSIC. Repositorio Institucional del CSIC
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
ISSN: 1521-4095
0935-9648
Popis: Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.
Y.Z., C.D., and Z.G. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (nos. 11774153, 51772143, 11474158, 11890700, 11904162, 1861161004, 11625418, 11974163, 51732006, 52027803, 61704074, and 91963211), the National Basic Research (Key R&D) Program of China (2017YFA0303702 and 2018YFA0306200), the introduced innovative R&D team of Guangdong (2017ZT07C062), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (51720001), and the Fundamental Research Funds for the Central Universities (nos. 0213-14380198 and 0213-14380167). Y.N. was supported by High-Level Entrepreneurial and Innovative Talents Introduction, Jiangsu Province. Theoretical work was funded by the Luxembourg National Research Fund through project FNR/C18/MS/12705883/REFOX. (H.A. and J.Í.). C.C. acknowledges support from the Spanish Ministry of Science, Innovation, and Universities under the “Ramón y Cajal” fellowship RYC2018-024947-I. R.R. acknowledges financial support by the Ministerio de Ciencia e Innovación (MICINN) under grant FEDER-MAT2017-90024-P and the Severo Ochoa Centres of Excellence Program under Grant CEX2019-000917-S and by the Generalitat de Catalunya under grants no. 2017 SGR 1506. The authors thank the Centro de Supercomputación de Galicia (CESGA) for the use of their computational resources. The authors thank Yaya Zhou for the support of SEM and EDS measurement.
With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).
Databáze: OpenAIRE
Externí odkaz: