The interface quality of Ge nanoparticles grown in thick silica matrix
Autor: | Irina Pucić, Jasna Dasović, Pavo Dubček, Nikola Radić, Branko Pivac, Sigrid Bernstorff |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Photoluminescence Band gap General Physics and Astronomy chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences 0103 physical sciences 010302 applied physics Potential well business.industry Surfaces and Interfaces General Chemistry Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Semiconductor chemistry Quantum dot Optoelectronics Grazing-incidence small-angle scattering Ge QDs GISAXS GIWAXS Infrared spectroscopy Advanced solar cells 0210 nano-technology business |
Zdroj: | Applied Surface Science. 414:1-7 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2017.03.264 |
Popis: | Germanium nanoparticles, or Ge quantum dots (QDs), embedded in different transparent dielectric matrix exhibit properties significantly different from the same bulk semiconductor and therefore exhibit a considerable potential for applications in advanced electronic and optoelectronic devices. It is expected that the quantum confinement effect will tune the optical bandgap simply by varying the QDs size. Nevertheless, the question remains whether and how the defects often present in the matrix or at interfaces affect their properties. A thick (SiO 2 + Ge) layer was deposited by magnetron sputtering and after suitable thermal treatment spherical Ge QDs were formed in SiO 2 matrix with rather narrow size distribution, as confirmed by GIWAXS and GISAXS analysis. It is shown that the formed surface/interface of the QDs with the matrix was rough with fractal nature. Annealing in N 2 atmosphere produced photoluminescence (PL) in the visible part of the spectrum which consists of three contributions. All are attributed to structural defects at or close to the Ge/SiO x interface. Time-resolved PL results support the assumption that the three components are dominant in the observed luminescence. |
Databáze: | OpenAIRE |
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