Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates
| Autor: | H. Abed, Corentin Jorel, Corentin Vallée, M. Bonvalot, Catherine Dubourdieu, E. Gourvest, M. Kahn |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Analytical chemistry Mineralogy 02 engineering and technology Surfaces and Interfaces Dielectric Chemical vapor deposition 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Attenuated total reflection 0103 physical sciences Materials Chemistry Crystallite 0210 nano-technology Spectroscopy ComputingMilieux_MISCELLANEOUS Monoclinic crystal system High-κ dielectric |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2010, pp.518, 5057-5060 Thin Solid Films, 2010, pp.518, 5057-5060 |
| ISSN: | 0040-6090 |
| Popis: | The microstructure of thin HfO2–Al2O3 nanolaminate high κ dielectric stacks grown by atomic vapor deposition has been studied by attenuated total reflection spectroscopy (ATR) and 8 eV spectroscopic ellipsometry (SE). The presence of Al2O3 below HfO2 prevents the crystallisation of HfO2 if an appropriate thickness is used, which depends on the HfO2 thickness. A thicker Al2O3 is required for thicker HfO2 layers. If crystallisation does occur, we show that the HfO2 signature in both ATR and 8 eV SE spectra allows the detection of monoclinic crystallites embedded in an amorphous phase. |
| Databáze: | OpenAIRE |
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