Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation
| Autor: | Raymond Quéré, J-C. Nallatamby, Raphaël Sommet, Nandha Kumar Subramani, Amit Kumar Sahoo |
|---|---|
| Přispěvatelé: | Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
SiC
Admittance Gallium nitride 02 engineering and technology 01 natural sciences Admittance parameters chemistry.chemical_compound AlN-GaN-AlGaN Mathematical model ComputingMilieux_MISCELLANEOUS 010302 applied physics wide band gap semiconductors HEMTs Wide-bandgap semiconductor MODFETs traps specifications aluminium compounds AlGaN HEMT 021001 nanoscience & nanotechnology high electron mobility transistors semiconductor growth Performance evaluation Optoelectronics trapping effects 0210 nano-technology silicon compounds channel traps Materials science III-V semiconductors Numerical models AC simulation High-electron-mobility transistor Low frequency Energy states 0103 physical sciences Electronic engineering Silicon carbide Energy level Y parameters [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics HEMT Silicon Carbide business.industry TCAD simulation chemistry LF admittance dispersion measurement gallium compounds business technology CAD (electronics) |
| Zdroj: | 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, ⟨10.1109/PRIME.2016.7519485⟩ |
| Popis: | In this work, we investigate the impact of GaN channel traps on the performance of AlN/GaN/AlGaN HEMT device grown on SiC substrate using two-dimensional TCAD physics based simulations. Traps specifications used here are acquired from the data reported in the literature. The simulated DC characteristics are compared with experimental measurements for validation, providing an appropriate feedback for future technological improvements. Furthermore using the Low Frequency (LF) AC simulations results, we demonstrate that the LF admittance dispersion measurement is an effective tool for identifying the traps in the device structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|