Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell
| Autor: | Pascal Rivat, Fiacre Rougieux, Yimao Wan, Roland Einhaus, Chris Samundsett, Xinbo Yang, Peiting Zheng, Julien Degoulange, Daniel Macdonald |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element 02 engineering and technology 3d simulation 01 natural sciences law.invention compensation Energy(all) law Getter Electrical resistivity and conductivity 0103 physical sciences Solar cell Electronic engineering Common emitter Silicon solar cell 010302 applied physics business.industry upgraded metallurgical grade silicon Carrier lifetime 021001 nanoscience & nanotechnology solar cell chemistry modelling and simulation Optoelectronics 0210 nano-technology business |
| Zdroj: | Energy Procedia. 92:434-442 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2016.07.124 |
| Popis: | In this paper, we present the 3D simulation of>20% efficiency solar cells using n- type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces. |
| Databáze: | OpenAIRE |
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