High-efficiency lithium niobate modulator for K band operation
| Autor: | Sean Nelan, Andrew J. Mercante, Abu Naim R. Ahmed, Shouyuan Shi, Dennis W. Prather, Peng Yao |
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| Rok vydání: | 2020 |
| Předmět: |
lcsh:Applied optics. Photonics
Materials science Extinction ratio Silicon Computer Networks and Communications business.industry Bandwidth (signal processing) Lithium niobate lcsh:TA1501-1820 chemistry.chemical_element 02 engineering and technology 01 natural sciences Atomic and Molecular Physics and Optics 010309 optics chemistry.chemical_compound 020210 optoelectronics & photonics chemistry Silicon nitride K band 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Insertion loss Optoelectronics business Voltage |
| Zdroj: | APL Photonics, Vol 5, Iss 9, Pp 091302-091302-8 (2020) |
| ISSN: | 2378-0967 |
| DOI: | 10.1063/5.0020040 |
| Popis: | This paper reports a hybrid silicon nitride–lithium niobate electro-optic Mach–Zehnder-interferometer modulator that demonstrates overall improvements in terms of half-wave voltage, optical insertion loss, extinction ratio, and operational bandwidth. The fabricated device exhibits a DC half-wave voltage of ∼1.3 V, a static extinction ratio of ∼27 dB, an on-chip optical loss of ∼1.53 dB, and a 3 dB electro-optic bandwidth of 29 GHz. In addition, this device operates beyond the 3 dB bandwidth, where a half-wave voltage of 3 V is extracted at 40 GHz when the device is biased at quadrature. The modulator is realized by strip-loading thin-film lithium niobate with low-pressure chemical vapor deposited silicon nitride; this enables reduced on-chip losses and allows for a lengthened 2.4 cm long interaction region that is specifically engineered for broadband performance. |
| Databáze: | OpenAIRE |
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