Study of chemical bath deposited In2S3 thin films
Autor: | E.V. Maraeva, L. N. Maskaeva, V. F. Markov, S.S. Tulenin |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Chemistry BOUNDARY CONDITIONS CHEMICAL BATH DEPOSITION 02 engineering and technology General Chemistry Combustion chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Carbon film Chemical engineering 0103 physical sciences XPS Thin film 0210 nano-technology INDIUM(III) SULFIDE |
Zdroj: | Asian Journal of Chemistry |
Popis: | Indum(III) sulfide (In2S3) thin films were grown by means of chemical bath deposition from acid solution. Calculation of ionic equilibrium with using of thermodynamic constants for systems defines boundary conditions of formation In2S3. Films were characterized by means of XRD, SEM, EDX and XPS methods. According to XRD, films have cubic structure of In2S3. XPS method shown that the surface of In2S3 thin film includes oxygen and carbon contained impurities. SEM confirmed nanosize nature of thin films. Optical band gap of indium(III) sulfide equal to 2.3 eV. |
Databáze: | OpenAIRE |
Externí odkaz: |