High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter
| Autor: | Shigehisa Arai, Guangwei Cong, Morifumi Ohno, Koji Yamada, Makoto Okano, Kazuto Itoh, Yuriko Maegami, Nobuhiko Nishiyama |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Silicon business.industry Silicon on insulator chemistry.chemical_element Electro-optic modulator 02 engineering and technology 01 natural sciences Atomic and Molecular Physics and Optics law.invention chemistry.chemical_compound 020210 optoelectronics & photonics Optics Semiconductor chemistry Depletion region law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering business p–n junction Waveguide |
| Zdroj: | Optics Express. 25(25):31407-31416 |
| Popis: | We demonstrate a silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. Constructing a vertical p-n junction in a flat etchless SOI layer provides superior controllability and uniformity of carrier profiles. Moreover, the waveguide structure based on a thin a-Si:H strip line can be fabricated easily and precisely. Thanks to a large overlap between the depletion region and optical field in the SOI layer with a vertical p-n junction, the MZM provides 0.80- to 1.86-Vcm modulation efficiency and a 12.1- to 16.9-dBV loss-efficiency product, besides guaranteeing a 3-dB bandwidth of about 17 GHz and 28-Gbps high-speed operation. The αVπL is considerably lower than that of conventional high-speed modulators. |
| Databáze: | OpenAIRE |
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