Chemical Sensor Properties and Mathematical Modeling of Graphene Oxide Langmuir-Blodgett Thin Films
| Autor: | Yaser Acikbas, Sibel Celik Acikbas, Matem Erdogan, Ali Deniz, Kemal Buyukkabasakal, Rifat Capan |
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| Přispěvatelé: | Uşak Üniversitesi, Mühendisilik Fakültesi, Elektrik Elektronik Mühendisliği Bölümü, Fen Edebiyat Fakültesi |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Diffusion Oxide SPR Chemical sensor 01 natural sciences Langmuir–Blodgett film law.invention chemistry.chemical_compound law Electrical and Electronic Engineering Surface plasmon resonance Thin film Instrumentation Graphene business.industry 010401 analytical chemistry LB thin films Quartz crystal microbalance NARX-ANN 0104 chemical sciences chemistry QCM Optoelectronics graphene oxide Selectivity business |
| Popis: | Çapan, Rifat (Balikesir Author) Graphene oxide (GO) Langmuir-Blodgett (LB) thin films were prepared to use as chemical sensor element. The properties of GO LB thin film layers were characterized via Quartz crystal microbalance (QCM) method. Selectivity of the sensor to various organic vapors was investigated by surface plasmon resonance (SPR) and QCM techniques. Fick's equations were used for calculating the diffusion coefficients (D) values of organic vapors. It was observed that chemical gas sensing characteristics of the GO film sensor shows a large response to some hazardous organic vapors. Then, by using experimental measurements that obtained during this process, NARX-ANN-based mathematical model of frequency shift of the quartz resonator was designed. The results of NARX-ANN verify the efficiency of the designed model. BAP: Research Foundation of Usak University UBATAM: Usak University, Scientific Analysis Technological Application and Research Center |
| Databáze: | OpenAIRE |
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