Enhancing the defect contrast in ECCI through angular filtering of BSEs
| Autor: | Roger Loo, Andreas Schulze, Tomas Vystavel, Wilfried Vandervorst, Matty Caymax, Robert Langer, Thomas Hantschel, Bernardette Kunert, Libor Strakos, Han Han |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Detector chemistry.chemical_element 02 engineering and technology Electron 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Secondary electrons Electronic Optical and Magnetic Materials Semiconductor Optics chemistry Backscatter X-ray 0103 physical sciences 0210 nano-technology business Instrumentation Beam (structure) |
| Zdroj: | Ultramicroscopy. 210:112922 |
| ISSN: | 0304-3991 |
| Popis: | In this study, an annular multi-segment backscattered electron (BSE) detector is used in back scatter geometry to investigate the influence of the angular distribution of BSE on the crystalline defect contrast in electron channeling contrast imaging (ECCI). The study is carried out on GaAs and Ge layers epitaxially grown on top of silicon (Si) substrates, respectively. The influence of the BSE detection angle and landing energy are studied to identify the optimal ECCI conditions. It is demonstrated that the angular selection of BSEs exhibits strong effects on defect contrast formation with variation of beam energies. In our study, maximum defect contrast can be obtained at BSE detection angles 53–65° for the investigated energies 5, 10 and 20 keV. In addition, it is found that higher beam energy is favorable to reveal defects with stronger contrast whereas lower energy ( ≤ 5 keV) is favorable for revealing crystalline defects as well as with topographic features on the surface. Our study provides optimal ECCI conditions, and therefore enables a precise and fast detection of threading dislocations in lowly defective materials and nanoscale 3D semiconductor structures where signal to noise ratio is especially important. A comparison of ECCI with BSE and secondary electron imaging further demonstrates the strength of ECCI in term of simultaneous detection of defects and morphology features such as terraces with atomic step heights. |
| Databáze: | OpenAIRE |
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