Nanometer-range strain distribution in layered incommensurate systems

Autor:	Lucie Szabová, Josef Mysliveček, Oleksandr Stetsovych, Vladimír Matolín, Stefano Fabris, Filip Dvořák
Rok vydání:	2012
Předmět:	Lattice constant Materials science Strain (chemistry) Condensed matter physics Graphene law Resolution (electron density) General Physics and Astronomy Moiré pattern Substrate (electronics) Thin film Scanning tunneling microscope law.invention
Zdroj:	Physical review letters info:cnr-pdr/source/autori:Stetsovych, Oleksandr; Dvorak, Filip; Szabova, Lucie; Fabris, Stefano; Myslivecek, Josef; Matolin, Vladimir/titolo:Nanometer-Range Strain Distribution in Layered Incommensurate Systems/doi:10.1103%2FPhysRevLett.109.266102/rivista:Physical review letters (Print)/anno:2012/pagina_da:/pagina_a:/intervallo_pagine:/volume:109
ISSN:	1079-7114
Popis:	We adopt fringe counting from classical moire interferometry on moire patterns observed in scanning tunneling microscopy of strained thin films on single crystalline substrates. We analyze inhomogeneous strain distribution in islands of CeO2(111) on Cu(111) and identify a generic source of strain in heteroepitaxy-a thickness-dependent lattice constant of the growing film. This observation is mediated by the ability of ceria to glide on the Cu substrate. The moire technique we are describing has a potential of nanometer-scale resolution of inhomogeneous two dimensional strain in incommensurate layered systems, notably in supported graphene. DOI: 10.1103/PhysRevLett.109.266102
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c7ec69a950d8dbb303383b41e6721d https://pubmed.ncbi.nlm.nih.gov/23368586 Zobrazit plný text záznamu