Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing
| Autor: | Terje G. Finstad, Wenyong Su, Y.K. Gao, Penggang Yin, W. Xiang, C. L. Heng, Han-Chun Wu |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Scanning electron microscope Annealing (metallurgy) Exciton 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Crystallinity 0103 physical sciences X-ray crystallography Optoelectronics Thin film 0210 nano-technology business |
| ISSN: | 2159-3930 |
| Popis: | We studied the photoluminescence (PL) properties of (Ce + Yb) co-doped ZnO thin films as a function of high temperature annealing. The films were fabricated by magnetron sputtering. After 1000-1100°C annealing, the near band edge (NBE) emissions of the films were dozens to a hundred times stronger than that of undoped ZnO, while the Yb3+ emission (~980 nm) was quite weak, indicating that energy transfers from the ZnO host to Yb3+ ions in the films were not efficient. X-ray diffraction analysis and scanning electron microscopy observations demonstrated that the (Ce + Yb) co-doping had a large effect on the morphology and crystallinity of the films. The crystallinity enhancement of the films is considered to be the main reason for the strong NBE enhancements of the co-doped ZnO films. © 2017 Optical Society of America |
| Databáze: | OpenAIRE |
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