Anisotropic etching of three-dimensional shapes in silicon
| Autor: | Kretschmer, H. -R., Xia, X., Kelly, J.J., Steckenborn, A., Chemie van de vaste stof: Luminescentie en elektrochemie, Universiteit Utrecht, Dep Scheikunde |
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| Přispěvatelé: | Chemie van de vaste stof: Luminescentie en elektrochemie, Universiteit Utrecht, Dep Scheikunde |
| Rok vydání: | 2004 |
| Předmět: |
Microelectromechanical systems
Work (thermodynamics) Materials science Fabrication Anisotropic etching Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Semiconductor chemistry Materials Chemistry Electrochemistry Galvanic cell Optoelectronics business |
| Zdroj: | Journal of the Electrochemical Society, 151(10), C633. Electrochemical Society, Inc. |
| ISSN: | 0013-4651 |
| Popis: | As a result of the exposure to solution of different crystallographic facets during anisotropic etching of three-dimensional structures in silicon, the open-circuit potential of the semiconductor can change markedly. Using a (100)Si substrate, masked to reseal (111) facets, we show that such a shift in potential can alter the chemical etch rates of the individual facets. The extent of the changes depends both on the facets exposed and on their relative areas. Because the surface geometry, and with it the silicon potential, change continuously in time, chemical etching must adapt continuously to these changes. This is an interesting example of a self-regulating system with a complex feedback mechanism. The effects described in this work clearly influence anisotropic etching ratios and are therefore important for the fabrication of microelectromechanical systems. |
| Databáze: | OpenAIRE |
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