On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes

Autor:	E.L. Pankratov, E.A. Bulaeva
Rok vydání:	2018
Předmět:	Condensed Matter::Materials Science analytical approach for modelling Condensed Matter::Superconductivity δ-doping p-i-n-heterodiodes Condensed Matter::Strongly Correlated Electrons optimization of manufacturing decreasing of dimensions of p-i-n-diodes
DOI:	10.5281/zenodo.1489476
Popis:	We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3556db0c2e91d921a0b024413099a660 Zobrazit plný text záznamu