COMSOL Model of a Three-Gate Junctionless Transistor
| Autor: | Dimitar Nikolov, Rostislav Rusev, Marin Hristov, Rosen Ivanov Radonov, Ivelina Nikolaeva Ruskova, Mariya Spasova, George Angelov, Elitsa Gieva |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon Multiphysics 3D TCAD model Nanowire chemistry.chemical_element Solid modeling Hardware_PERFORMANCEANDRELIABILITY Data modeling law.invention law Hardware_INTEGRATEDCIRCUITS atmospheric radicals nanowire junctionless transistor 3D TCAD model radical environmental monitoring air quality monitoring atmospheric radicals junctionless nanowire transistor environmental monitoring radical business.industry Transistor Charge density nanowire junctionless transistor air quality monitoring chemistry Logic gate air sensor Optoelectronics business Hardware_LOGICDESIGN |
| Zdroj: | 2021 IEEE 32nd International Conference on Microelectronics (MIEL) ZENODO |
| DOI: | 10.5281/zenodo.5594459 |
| Popis: | A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied. DOI: 10.1109/MIEL52794.2021.9569053 |
| Databáze: | OpenAIRE |
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