First principles study of charge diffusion between proximate solid state qubits and its implications on sensor applications
| Autor: | Jyh-Pin Chou, Zoltán Bodrog, Adam Gali |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Quantum decoherence
General Physics and Astronomy FOS: Physical sciences Nanotechnology 02 engineering and technology engineering.material 01 natural sciences Paramagnetism Computer Science::Emerging Technologies Quantum mechanics 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Diffusion (business) 010306 general physics Quantum tunnelling Quantum Physics Quantum network Condensed Matter - Mesoscale and Nanoscale Physics Chemistry Diamond Charge (physics) 021001 nanoscience & nanotechnology Qubit engineering 0210 nano-technology Quantum Physics (quant-ph) |
| DOI: | 10.48550/arxiv.1708.08626 |
| Popis: | Solid state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make possible to create proximate qubits in solids that might interact with each other, leading to electron spin/charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles, and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form an NV--NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond. Comment: 4 figures |
| Databáze: | OpenAIRE |
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