Lateral conductivity in GaAs/InAs quantum dot structures
| Autor: | Paola Frigeri, Jiří Mareš, S. Franchi, L. Dózsa, Pavel Hubík, E. Gombia, Zs. J. Horváth, A. L. Tóth, Roberto Mosca, Jozef Krištofik |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
III-V semiconductors
Condensed matter physics Quantum dots Chemistry Conductance Conductivity Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Capacitance Electrical contacts Electronic Optical and Magnetic Materials Quantum wells Quantum dot Rectangular potential barrier Instrumentation Quantum well Excitation |
| Zdroj: | EPJ. Applied physics 27 (2004): 93–95. doi:10.1051/epjap:2004113 info:cnr-pdr/source/autori:L. Dózsa1, A. L. Tóth1, Zs. J Horváth1, P. Hubík2, J. Kri?tofik2, J. J. Mare?2, E. Gombia3, R. Mosca3, S. Franchi3 and P. Frigeri3/titolo:Lateral conductivity in GaAs%2FInAs quantum dot structures/doi:10.1051%2Fepjap:2004113/rivista:EPJ. Applied physics (Print)/anno:2004/pagina_da:93/pagina_a:95/intervallo_pagine:93–95/volume:27 DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors, Batz-sur-Mer (Francia), 2003 info:cnr-pdr/source/autori:Dozsa L., Toth L., Horvath Zs.J., Hubik P., Kristofik J., Mares J.J., Gombia E., Frigeri P., Mosca R., Franchi S./congresso_nome:DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors/congresso_luogo:Batz-sur-Mer (Francia)/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine |
| ISSN: | 1286-0050 1286-0042 |
| Popis: | Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport, in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts. |
| Databáze: | OpenAIRE |
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